Study of electronic states for V thin films deposited on 6H-SiC substrates by soft X-ray emission spectroscopy |
| |
Authors: | M Hirai H Okazaki M Tajima Y Muraoka T Yokoya |
| |
Institution: | a Division of Frontier and Fundamental Sciences, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan b Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700-8530, Japan c Mathematics and Physics, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan |
| |
Abstract: | Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system is fundamentally important from the view point of device performance.We study interface electronic structure of vanadium (V) thin-film deposited on 6H-SiC(0 0 0 1) Si-face by using a soft X-ray emission spectroscopy (SXES). For specimens of V(38 nm)/6H-SiC (substrate) contact systems annealed at 850 °C, the Si L2,3 emission spectra indicate different shapes and peak energies from the substrate. The product of materials such as silicides and/or ternary materials is suggested. Similarly, the C Kα emission spectra show the shape and peak energy characteristic of vanadium carbide including substrate 6H-SiC signal. |
| |
Keywords: | 68 35 &minus p 73 20 &minus r |
本文献已被 ScienceDirect 等数据库收录! |
|