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Low temperature deposited Zr-B film applicable to extremely thin barrier for copper interconnect |
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| Authors: | Mayumi B Takeyama Atsushi Noya Shozo Kambara Yuichiro Hayasaka Hideaki Machida Kazuya Masu |
| Institution: | a Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Koen-cho 165, Kitami, Hokkaido 090-8507, Japan b ULVAC Materials Inc. Yokota, Sanbu, Chiba 289-1297, Japan c Institute of Semiconductor Technologies, ULVAC Inc. Suyama, Susono, Shizuoka 410-1231, Japan d Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan e Tri Chemical Laboratory Inc. Uenohara, Yamanashi 409-0112, Japan f Integrated Research Institute, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan |
| Abstract: | We have prepared thin Zr-B films at low temperatures as a new material applicable to an extremely thin barrier against Cu diffusion in Si-ULSI metallization. The obtained Zr-B films mainly consist of the ZrB2 phase with a nanocrystalline texture on SiO2 and a fiber texture on Cu. The resistivity of the Zr-B films depends on the substrate of SiO2 or Cu. The constituent ratio of B/Zr is almost 2, though the contaminants of oxygen, nitrogen, and carbon are incorporated in the film. The nanocrystalline structure of the Zr-B film on SiO2 is stable due to annealing at temperatures up to 500 °C for 30 min. We applied the 3-nm thick Zr-B film to a diffusion barrier between Cu and SiO2, and the stable barrier properties were confirmed. We can demonstrate that the thin Zr-B film is a promising candidate for thin film application to a metallization material in Si-ULSIs. |
| Keywords: | Cu interconnect Diffusion barrier ZrB2 Nanocrystalline |
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