Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel |
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Authors: | Thanh Nga Nguyen |
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Institution: | School of Information and Communication Engineering, SungKyungKwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Kyungki-do, 440-746, Republic of Korea |
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Abstract: | Raman scattering analysis is used to study the residual stress in metal-induced crystallized amorphous silicon thin film. The influence of the crystallization parameters on thin film properties is investigated as a function of annealing temperature, annealing time, and nickel top-seed-layer thickness. Thin films produced under optimal annealing conditions are measured to have crystallization efficiency of about 98%, which is full crystallization. Residual stress analysis reveals clear stress reduction with prolonged annealing time and Ni capping layer thickness. A very low tensile stress of about 87 MPa is achieved. The relationships between optimal crystallization temperature, crystallization time, and Ni-layer thickness are described. |
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Keywords: | Metal-induced crystallization (MIC) Nickel Raman spectrum Amorphous silicon Polycrystalline Residual stress |
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