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Addition reaction and characterization of chlorotris(triphenylphosphine)iridium(I) on silicon(1 1 1) surfaces |
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| Authors: | Gary Shambat Albert Deberardinis Petra Reinke Lin Pu John Bean |
| Institution: | a Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA b Department of Chemistry, University of Virginia, Charlottesville, VA 22904, USA c Chemistry Department, Rice University, Houston, TX 77251, USA d Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA |
| Abstract: | Studies were performed to determine the chemical addition of a metal complex molecule, chlorotris(triphenylphosphine)iridium(I), on hydrogen passivated Si(1 1 1) surfaces to form a self-assembled monolayer (SAM). The iridium complex was synthesized prior to chemical addition, for which modified reaction conditions were chosen. Following addition, the silicon surfaces were characterized with X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). The XPS results revealed that the surfaces consisted of the expected elemental percentages and that the iridium has a slightly higher success rate at attaching to oxide-free surfaces. XPS data also strongly indicate that the iridium complex remained intact upon chemisorption and did not decompose during the addition reaction. CV data show a difference between iridium treated surfaces and control samples. Hydrogen passivated wafers with iridium complex were much more conductive than those which were terminated with just an oxide or with an oxide and iridium complex. Furthermore, no free iridium reagent was detected as an additional feature in the current profile, indicating there was no physisorbed layer. |
| Keywords: | Self-assembly Monolayer Molecular electronics Surface passivation Silicon Iridium |
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