Growth of carbon nanotubes on stainless steel substrates by DC-PECVD |
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Authors: | Dao Quang Duy Dang Mo Yoon Jung Woong Ha Choong Hun Lee Bach Thanh Cong |
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Institution: | a Division of Microelectronics and Display Technology, College of Natural Sciences, Wonkwang University, Iksan, 344-2 Shinyong Dong, Iksan, Jeonbuk 570-749, Republic of Korea b Regional Innovation Center for Next Generation Industrial Radiation Technology, 208 College of Natural Sciences, Wonkwang University, Iksan, 344-2 Shinyong Dong, Iksan, Jeonbuk 570-749, Republic of Korea c Faculty of Physics, HaNoi University of Science, VietNam National University, 334 Nguyen Trai, Thanh Xuan, HaNoi, VietNam |
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Abstract: | We report on the fabrication of carbon nanotubes (CNTs) on Ni-coated stainless steel (SUS) substrates by using dc plasma enhanced chemical vapor deposition. The synthesized CNTs have the diameter of about 30 nm and the length of about 1.2 μm. To verify the effects of SUS substrates on the growth of CNTs, CNTs had also been grown on Ni-coated Si substrates. CNTs grown on the SUS substrates were more uniform compared with those grown on the Si substrates. Field emission properties of the CNT films were measured in the diode configuration, and the turn-on electric field of 3.87 V/μm and field enhancement factor β of about 1737 were obtained from the synthesized CNTs at the gap of 500 μm between the SUS substrate and the anode. These results have not only clarified the effects of the substrate on the growth of CNTs, but also shown the potential of CNTs in field emission applications, especially CNT-based cold-cathode X-ray tubes. |
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Keywords: | 72 80 |
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