| Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate |
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| 作者姓名： | 郭娇欣 丁杰 莫春兰 郑畅达 潘拴 江风益 |
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| 作者单位： | National Institute of LED on Silicon Substrate |
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| 基金项目： | Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400600 and 2016YFB0400601);the National Natural Science Foundation of China(Grant Nos.61704069 and 51705230)。 |
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| 摘 要： | The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes(LEDs)grown on silicon substrate was investigated.The results show that AlGaN interlayer is beneficial to improve the luminous efficiency of LED devices and restrain the phase separation of In GaN.The former is ascribed to the inserted AlGaN layers can play a key role in determining the carrier distribution and screening dislocations in the active region,and the latter is attributed to the increased compressive stress in the quantum well.However,when the electrical stress aging tests were performed at a current density of 100 A/cm^2,LED devices with AlGaN interlayers are more likely to induce the generation/proliferation of defects in the active region under the effect of electrical stress,resulting in the reduced light output power at low current density.
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| 关 键 词： | green LED ALGAN INTERLAYER EXTERNAL QUANTUM efficiency RELIABILITY |
Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate |
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| Jiao-Xin Guo,Jie Ding,Chun-Lan Mo,Chang-Da Zheng,Shuan Pan,Feng-Yi Jiang.Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate[J].Chinese Physics B,2020(4):439-444. |
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| Authors: | Jiao-Xin Guo Jie Ding Chun-Lan Mo Chang-Da Zheng Shuan Pan Feng-Yi Jiang |
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| Institution: | (National Institute of LED on Silicon Substrate,Nanchang University,Nanchang 330096,China) |
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| Abstract: | The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes (LEDs) grown on silicon substrate was investigated. The results show that AlGaN interlayer is beneficial to improve the luminous efficiency of LED devices and restrain the phase separation of In GaN. The former is ascribed to the inserted AlGaN layers can play a key role in determining the carrier distribution and screening dislocations in the active region, and the latter is attributed to the increased compressive stress in the quantum well. However, when the electrical stress aging tests were performed at a current density of 100 A/cm~2, LED devices with AlGaN interlayers are more likely to induce the generation/proliferation of defects in the active region under the effect of electrical stress, resulting in the reduced light output power at low current density. |
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