| A method of generating random bits by using electronic bipolar memristor |
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| 作者姓名： | 杨彬彬 许诺 周二瑞 李智炜 李成 易品筠 方粮 |
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| 作者单位： | Institute for Quantum Information&State Key Laboratory of High Performance Computing;College of Computer;College of Electronic Science and Engineering |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(Grant No.61832007);the National Key Research and Development Program of China(Grant No.2018YFB1003304)。 |
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| 摘 要： | The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory.However,such a weakness can be used as an asset for generating the random bits,which is valuable in a hardware security system.In this work,a forming-free electronic bipolar Pt/Ti/Ta2O5/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device.The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the"oxygen grabbing"process.The stochasticity of the electrons trapping/detrapping governs the random distribution of the set/reset switching voltages of the device,making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal.The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.
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| 关 键 词： | MEMRISTOR resistance switching ELECTRONS trapping/de-trapping RANDOM BITS |
A method of generating random bits by using electronic bipolar memristor |
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| Bin-Bin Yang,Nuo Xu,Er-Rui Zhou,Zhi-Wei Li,Cheng Li,Pin-Yun Yi,Liang Fang.A method of generating random bits by using electronic bipolar memristor[J].Chinese Physics B,2020(4):535-540. |
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| Authors: | Bin-Bin Yang Nuo Xu Er-Rui Zhou Zhi-Wei Li Cheng Li Pin-Yun Yi Liang Fang |
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| Institution: | (Institute for Quantum Information&State Key Laboratory of High Performance Computing,College of Computer,National University of Defense Technology,Changsha 410073,China;College of Computer,National University of Defense Technology,Changsha 410073,China;College of Electronic Science and Engineering,National University of Defense Technology,Changsha 410073,China) |
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| Abstract: | The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory. However, such a weakness can be used as an asset for generating the random bits, which is valuable in a hardware security system. In this work, a forming-free electronic bipolar Pt/Ti/Ta_2O_5/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device. The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the "oxygen grabbing" process. The stochasticity of the electrons trapping/detrapping governs the random distribution of the set/reset switching voltages of the device, making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal. The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications. |
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