Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Geant4 Monte Carlo simulation results of the single event upset(SEU) induced by protons with energy ranging from0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3 D) die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3 D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU) ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3 D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the onorbit upset rate for the 3 D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3 D die-stacked device.