| Growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates by molecular beam epitaxy |
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| 引用本文： | 沈逸凡,尹锡波,徐超凡,贺靖,李俊烨,李含冬,朱小红,牛晓滨.Growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates by molecular beam epitaxy[J].中国物理 B,2020(5):429-434. |
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| 作者姓名： | 沈逸凡 尹锡波 徐超凡 贺靖 李俊烨 李含冬 朱小红 牛晓滨 |
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| 作者单位： | College of Materials Science and Engineering;School of Materials and Energy |
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| 基金项目： | Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFA0306102 and 2018YFA0306703);the National Natural Science Foundation of China(Grant Nos.61474014 and U1601208);the Sichuan Science and Technology Program,China(Grant Nos.2019YJ0202 and 20GJHZ0229). |
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| 摘 要： | Epitaxial growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates are studied.The In2Se3 thin films grown below theβ-to-αphase transition temperature(453 K)are characterized to be strainedβ-In2Se3 mixed with significantγ-In2Se3 phases.The pure-phased single-crystallineβ-In2Se3 can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In2Se3 within the phase equilibrium temperature window ofβ-In2Se3.It is suggeted that the observedγ-to-βphase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In2Se3 thin-film system at a state far from thermodynamic equilibrium.
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| 关 键 词： | In2Se3 molecular beam epitaxy SINGLE-CRYSTALLINE annealing and quench phase transition |
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