La4(Si5.2Ge2.8O18)(TeO3)4 and La2(Si6O13)(TeO3)2: Intergrowth of the lanthanum(III) tellurite layer with the XO4 (X=Si/Ge) tetrahedral layer

Two novel lanthanum(III) silicate tellurites, namely, La₄(Si_5.2Ge_2.8O₁₈)(TeO₃)₄ and La₂(Si₆O₁₃)(TeO₃)₂, have been synthesized by the solid state reactions and their structures determined by single crystal X-ray diffraction. The structure of La₄(Si_5.2Ge_2.8O₁₈)(TeO₃)₄ features a three-dimensional (3D) network composed of the [(Ge_2.82Si_5.18)O₁₈]⁴⁻ tetrahedral layers and the [La₄(TeO₃)₄]⁴⁺ layers that alternate along the b-axis. The germanate-silicate layer consists of corner-sharing XO₄ (X=Si/Ge) tetrahedra, forming four- and six-member rings. The structure of La₂(Si₆O₁₃)(TeO₃)₂ is a 3D network composed of the [Si₆O₁₃]²⁻ double layers and the [La₂(TeO₃)₂]²⁺ layers that alternate along the a-axis. The [Si₆O₁₃]²⁻ double layer is built by corner-sharing silicate tetrahedra, forming four-, five- and eight-member rings. The TeO₃²⁻ anions in both compounds are only involved in the coordination with La³⁺ ions to form a lanthanum(III) tellurite layer. La₄(Si_5.2Ge_2.8O₁₈)(TeO₃)₄ is a wide band-gap semiconductor.