纯化器对VHF-PECVD制备的不同结构硅薄膜特性的影响

本文采用VHF-PECVD技术制备了不同结构的硅薄膜,分析研究了有、无纯化器对制备薄膜特性的影响.电学特性和结构特性测试结果表明:在10W的功率条件下,使用纯化器时制备的薄膜是光敏性满足非晶硅电池要求的材料,而在不使用纯化器时制备的材料是适用于太阳能电池有源层的纳米硅材料;在30W时,不使用纯化器制备薄膜的晶化明显增大,光敏性也相应的降低,50W的条件表现出相类似的结果,初步分析是氧引起的差别;激活能的测试结果也表明,使用纯化器会降低材料中的氧含量,即表现激活能相对大;另外,沉积速率的测试结果也给出:耗尽区所在位置与是否使用纯化器有很大关系.

Effect of Purifier on Silicon Thin Films with Different Structures Deposited by VHF-PECVD

Different structural silicon thin films deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) were studied at the use of purifier or not. The results of electronic and structural properties showed that amorphous silicon and nanocrystalline silicon thin films were respectively deposited at 10W at the use of purifier or not. Silicon thin film deposited at the use of purifier showed the higher crystalline volume fraction (Xc) and lower photosensitivity at 30W and 50W. The reason might have come from the influence of oxygen. The results of active energy also indicated that the use of purifier would decrease the oxygen content of material. In addition, the results of deposition rate demonstrated that the depletion zone was in the different position at the use of purifier or not.