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Growth of group III nitride films by pulsed electron beam deposition |
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| Authors: | J. Ohta K. Sakurada A. Kobayashi |
| Affiliation: | a Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 1538505, Japan b Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 2130012, Japan c Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 1020075, Japan |
| Abstract: | We have grown group III nitride films on Al2O3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO ( ) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 °C. |
| Keywords: | Pulsed electron beam deposition Group III nitrides |
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