Structural and electrical properties evolution in Ba1−xSrxRuO3 synthesized under high pressure |
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Authors: | Jinggeng Zhao Liuxiang Yang Fengying Li Changqing Jin |
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Institution: | a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China b Natural Science Research Center, Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150080, PR China |
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Abstract: | The 6H and 6M Ba1−xSrxRuO3 at x?0.6 with the normal and distorted hexagonal BaTiO3 structures were synthesized by using high-pressure and high-temperature method. It is found that the unit cell volume deviates from Vegard's law between 0.3 and 0.4 for the solid solutions due to the increasing distortion degree of crystal structure. With the increasing x, the electrical resistivity at the same temperature is increasing. With the substitution of Sr for Ba ion, the 6H BaRuO3 transforms to a Fermi-liquid metal at x=0.25 from the primal non-Fermi-liquid metal, and then becomes a semiconductor at low temperature when x is larger than 0.4. |
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Keywords: | High-pressure synthesis 6H-perovskite A-site solid solutions Electrical conductivity |
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