Syntheses, crystal structures, and characterization of As(III) and As(V) thioarsenates, [Mn2(phen)(As2S5)]n and [Mn3(phen)3(AsS4)2]n·nH2O |
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| Authors: | Xin Wang Tian-Lu Sheng Rui-Biao Fu Xin-Tao Wu |
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| Institution: | a State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China
b Graduate University of Chinese Academy of Sciences, Beijing 100039, PR China |
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| Abstract: | The hydrothermal reactions of As, Mn, S, phen (phen=1,10-phenanthroline), and en (en=ethylenediamine) yield two manganese As(III) and As(V) thioarsenates, Mn2(phen)(AsIII2S5)]n (1) and Mn3(phen)3(AsVS4)2]n·nH2O (2), respectively. Single-crystal X-ray diffraction analyses reveal that compound 1 is a two-dimensional (2D) layer of (6,3) topology. The 18-membered rings within the 2D porous layers are formed by corner-, edge-, and face-sharing cubane-like Mn2As2S4] units along the 100] direction. Whereas compound 2 is a one-dimensional (1D) chain structure. They are both characterized by IR, elemental analysis, EDS, and X-ray powder diffraction. The thermogravimetric analysis of 1 and 2 are discussed. Both the compounds are semiconductors with the band gap of Eg (compound 1)=2.01 eV (617 nm) and Eg (compound 2)=1.97 eV (629 nm), respectively. In addition, the variable-temperature magnetic susceptibility data suggest weak antiferromagnetic interactions between the Mn2+ ions in these two compounds. |
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| Keywords: | Manganese Thioarsenate(III) Multiple physical properties Thermoanalysis Semiconductor Magnetism |
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