Depth profile investigations of metallic layer contacts to GaAs(100) and InP(100) by means of Auger Electron Spectroscopy and sputter technique |
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| Authors: | S. Stein, A. Reif, P. Streubel, A. Tschulik H. Stö ri |
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| Affiliation: | (1) Sektion Chemie, Universität Leipzig, Talstrasse 35, O-7010 Leipzig, Federal Republic of Germany;(2) Institut für Allgemeine Physik, Technische Universität Wien, Wiedner Hauptstrasse 8-10, A-1040 Wien, Austria |
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| Abstract: | Summary The present technological development in the field of opto-electronics requires a sufficiently high stability of the applied metal-semiconductor contacts because of the thermal and electrical cross-section loading. Au/Pt/Ti layer contacts to GaAs(100) and InP(100) substrates annealed under various conditions were investigated by means of Auger Electron Spectroscopy (AES) in conjunction with ion sputtering. The diffusion and reaction behavior are discussed based on intensity-depth profiles and chemical shifts. As the main result we found that the GaAs contact is more stable. It reacts strongly at a temperature of about 450°C. On the other hand Au/Pt/Ti/InP contact reacts already above 300°C. The principal reason for the difference in the behavior of InP and GaAs contacts is the In segregation. |
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