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隧道结电场辅助下叔丁胺分子在Cu(111)表面跳跃(英文)
引用本文:许逾群,仉君,袁秉凯,邓珂,杨蓉,裘晓辉.隧道结电场辅助下叔丁胺分子在Cu(111)表面跳跃(英文)[J].物理化学学报,2010,26(10):2686-2690.
作者姓名:许逾群  仉君  袁秉凯  邓珂  杨蓉  裘晓辉
作者单位:National Center for Nanoscience and Technology, Beijing 100190, P. R. China
基金项目:国家重点基础研究发展计划项目(973),中国科学院知识创新工程项 
摘    要:采用扫描隧道显微镜(STM)于78 K研究了单个叔丁胺分子在Cu(111)表面的横向跃迁现象.研究发现叔丁胺分子的跳跃几率随隧道电流的增加而线性增加,这表明该过程是单电子激发过程;在不同极性的隧道结电场作用下,叔丁基胺分子跳跃行为发生的几率不同,这种现象可以用电场辅助的扩散过程解释.在不同极性电场作用下叔丁胺分子在Cu(111)表面的吸附能和扩散势垒不同,从而表现出不同的跳跃几率.

关 键 词:扫描隧道显微镜  单分子  跳跃现象  电子激发  隧道结电场  
收稿时间:2010-06-13
修稿时间:2010-09-27

Electric Field Assisted Hopping of Tert-Butylamine on Cu(111)Surface
XU Yu-Qun,ZHANG Jun,YUAN Bing-Kai,DENG Ke,YANG Rong,QIU Xiao-Hui.Electric Field Assisted Hopping of Tert-Butylamine on Cu(111)Surface[J].Acta Physico-Chimica Sinica,2010,26(10):2686-2690.
Authors:XU Yu-Qun  ZHANG Jun  YUAN Bing-Kai  DENG Ke  YANG Rong  QIU Xiao-Hui
Institution:National Center for Nanoscience and Technology, Beijing 100190, P. R. China
Abstract:The lateral hopping of tert-butylamine (t-BA) molecules on a Cu(lll) surface was studied by scanning tunneling microscopy (STM) at 78K.The hopping probabilities of the molecules in the tunneling junction were found to depend linearly on the applied tunneling current,indicating a single electron-induced process.Hopping probabilities under an electric field of opposite polarity was found to be different.This non-equivalence is attributed to an electric field assisted diffusion where the adsorption energy and the diffusion barrier of the t-BA molecule are different when the polar molecule is subjected to opposite electric fields.
Keywords:Scanning tunneling microscope  Single molecule  Hopping phenomenon  Electronic excitation  Electric field in a tunneling junction
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