| 双扩散参量二极管的串联电阻及截止频率 |
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| 引用本文： | 续競存,卓济苍. 双扩散参量二极管的串联电阻及截止频率[J]. 物理学报, 1964, 20(6): 540-549 |
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| 作者姓名： | 续競存 卓济苍 |
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| 摘 要： | 本文为前文的继续。文中,更普遍地讨论了双扩散参量二极管的串联电阻及截止频率,所用处理方法及结果直接包括单扩散情况在内。指出:若材料很厚(w>>r),这时采用单扩散法是适当的,但当材料减薄时就应采用双扩散法,以便进一步有效地提高fc。
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| 收稿时间： | 1963-04-01 |
THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DOUBLE DIFFUSED PARAMETRIC DIODE |
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| SHIUH GEN-TWEN and CHUO CHI-TSANG. THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DOUBLE DIFFUSED PARAMETRIC DIODE[J]. Acta Physica Sinica, 1964, 20(6): 540-549 |
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| Authors: | SHIUH GEN-TWEN and CHUO CHI-TSANG |
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| Abstract: | The present analysis is an extension of previous work by the authors, in which the ordinary single diffused structure is only a limiting case where a→∞. Example of the analysis applied to silicon with phosphorus and boron as diffusants has been given. It is indicated that the double diffusion technique is the most effective one for increasing the cutoff frequency of parametric diode. |
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