| Abstract: | It is shown experimentally and theoretically that low-frquency-noise sources localized in the transition region and in the base resistance of a Schottky diode change their contribution to the retified-current noise by an order of magnitude or more under the influence of the barrier capacitance: the more the barrier capacitance shunts the junction at the high frequency, the higher the detector's noise level. Fluctuations of the barrier capacitance caused by fluctuations of the electron-trap occupation in the space-charge region do not manifest themselves in the noise of the studied detectors.St. Petersburg State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 35, No. 5, pp. 407–420, May, 1992. |
