Current induced domain wall motion in GaMnAs close to the Curie temperature

Domain wall dynamics produced by spin transfer torques is investigated in (Ga, Mn)As ferromagnetic semiconducting tracks with perpendicular anisotropy, close to the Curie temperature. The domain wall velocities are found to follow a linear flow regime which only slightly varies with temperature. Using the D?ring inequality, boundaries of the spin polarization of the current are deduced. A comparison with the predictions of the mean field k·p theory leads to an estimation of the carrier density whose value is compatible with results published in the literature. The spin polarization of the current and the magnetization of the magnetic atoms present similar temperature variations. This leads to a weak temperature dependence of the spin drift velocity and thus of the domain wall velocity. A combined study of field- and current-driven motion and deformation of magnetic domains reveals a motion of domain walls in the steady state regime without transition to the precessional regime. The ratio between the non-adiabatic torque β and the Gilbert damping factor α is shown to remain close to unity.