Effects of strain on the dissociation dynamics of O2 on Si(001) |
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Authors: | Yata Masanori Uesugi-Saitow Yuki Kitajima Masahiro Kubo Atsushi Korsukov Vyacheslav E |
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Affiliation: | National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. yata.masanori@nims.go.jp |
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Abstract: | There are two distinctive channels in the dissociation reaction of O2 on Si(001)-(2 x 1): a trapping-mediated channel and a direct-activated channel. Externally applied tensile strain along the <110> direction on the (001) surface is found to suppress the dissociation via a direct-activated channel and to enhance that via a trapping-mediated channel in the temperature range between 200 and 300 K. It has been demonstrated that the dissociation dynamics involving elementary processes such as inelastic scattering and trapping, desorption and/or dissociation from a trapping precursor, and direct dissociation are sensitively influenced by the strain to change the branching ratio of the dissociation reaction. |
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