Room temperature two-terminal characteristics in silicon nanowires |
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Authors: | SF Hu WZ WongSS Liu YC WuCL Sung TY Huang |
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Institution: | a National Nano Device Laboratories, 1001-1 Ta Hsueh Road, Hsinchu 300, Taiwan, ROC b Institute of Electronics, National Chiao Tung University, 1001-1 Ta Hsueh Road, Hsinchu 300, Taiwan, ROC |
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Abstract: | Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade. |
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Keywords: | 73 21 Hb |
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