Enhancement of magnetoresistances at room temperature in YSZ doping La0.67Sr0.33MnO3 system |
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Authors: | Z.C Xia S.L YuanL.J Zhang G.H ZhangW Feng J TangL Liu S LiuJ Liu G PengZ.Y Li Y.P YangC.Q Tang C.S Xiong |
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Affiliation: | Institute of Materials Physics and Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China |
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Abstract: | The temperature dependence of the resistance of composite samples (1−x)La0.67Sr0.33MnO3+xYSZ with different YSZ doping level x was investigated at magnetic fields 0-3 T, where YSZ represents yttria-stabilized zirconia. Results show that the YSZ dopant does not only adjust the metal-insulator transition temperature, but also increases the magnetoresistance effect. With increase of YSZ doping level for the range of x<2%, the metal-insulator transition temperature values TP of the composites decrease, but TP increases with increase of x further for the range of x>2%. Meanwhile, in the YSZ-doped composites, a broad metal-insulator transition temperature region was found at zero and low magnetic field, which results in an obvious enhanced magnetoresistance in the temperature range 10-350 K. Specially, a larger magnetoresistance value was observed at room temperature at 3 T, which is encouraging with regard to the potential application of magnetoresistance materials. |
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Keywords: | 71.30.th 75.30.Kz 75.30.Vn |
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