Luminescence of undoped β-Ga2O3 single crystals excited by picosecond X-ray and sub-picosecond UV pulses

Undoped β-Ga₂O₃ single crystals were grown using the floating zone technique under a pressure of 2 atm oxygen. Luminescence spectra of the crystals were measured with steady-state X-ray (<15 keV) and UV (258 nm, 4.8 eV) sources. The X-ray excitation produced a spectrum with a peak at 390 nm (3.2 eV) whereas the UV excited spectrum had a peak at 430 nm (2.9 eV). The luminescence rise and decay were also examined by using picosecond X-ray and sub-picosecond UV pulses. It was found that the X-ray pulse excitation gave a slower rise and a faster decay of the luminescence compared with the UV pulse excitation. These results suggest that X-ray excitation generates high energy electrons, building up luminescent states until those electrons lose their kinetic energies, giving rise to the formation of local hot spots in the gallium oxide crystals.