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Extremely large binding energy of biexcitons in an organic-inorganic quantum-well material (C4H9NH3)2PbBr4
Authors:Y. KatoD. Ichii  K. OhashiH. Kunugita  K. Ema  K. TanakaT. Takahashi  T. Kondo
Affiliation:a Department of Physics, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
b Department of Materials Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Abstract:We have confirmed biexciton formation in an organic-inorganic hybrid quantum-well material (C4H9NH3)2PbBr4 by photoluminescence and two-photon absorption measurements. The biexciton has extremely large binding energy, 60 meV, which to our knowledge is the largest value ever reported for a semiconductor. By analyzing the spectrum of biexciton luminescence, the biexciton gas temperature was found to be much higher than the bath temperature due to a higher local temperature arising from the large biexciton binding energy.
Keywords:A. Quantum wells   D. Optical properties   E. Nonlinear optics
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