SrTiO3 homoepitaxy by the pulsed laser deposition method: island, layer-by-layer, and step-flow growth |
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Authors: | J.H SongY.H Jeong |
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Affiliation: | Department of Physics and Electron Spin Science Center, Pohang University of Science and Technology, Pohang 790-784, South Korea |
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Abstract: | SrTiO3 homoepitaxy was investigated under various conditions using the pulsed laser deposition method. The growth mode was determined by in-situ reflection high-energy electron diffraction, and the surface of the films was characterized by ex-situ atomic force microscopy. At the laser fluence of 0.68 J/cm2, island growth was observed below 500 °C substrate temperature, while the growth mode turned into layer-by-layer growth above 500 °C. On further raising the substrate temperature, the step-flow growth mode prevailed above 800 °C. We thus demonstrated that step-flow growth in SrTiO3 homoepitaxy is possible at a temperature as low as 800 °C. |
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Keywords: | 81.10.Aj 81.10.Bk 81.15.Fg 81.15.Kk |
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