Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD |
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| Authors: | Kyu-Hyun Bang |
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| Affiliation: | a Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749, South Korea
b Department of Materials Science and Metallugical Engineering, Sunchon National University, Chonam 540-742, South Korea |
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| Abstract: | ZnO thin films were grown on c-plane sapphire and GaAs (001) substrates by metalorganic chemical vapor deposition. Atomic force microscopy and double-crystal X-ray diffractometry were utilized to investigate the structural properties of the ZnO films. The optical properties of ZnO films were also investigated in terms of time integrated and resolved photoluminescence (TIPL and TRPL). Large hexagonal crystallites and better crystalline quality were observed from the ZnO film on sapphire. Also, both the TIPL and TRPL showed a significant difference as the substrate changed. In particular, a detected sharp contrast in the result of TRPL measurement is due to the different defect structure and the lattice strain and stress of ZnO films on different substrates. |
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| Keywords: | 81.15.Gh 61.16.B 78.55.C |
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