Characterization of aluminium concentration in shallow quantum wells AlxGa1−xAs/GaAs types |
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| Authors: | M Chaouache R ChtourouF.F Charfi J Yves MarzinJ Bloch |
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| Affiliation: | a Unité de Recherche de Physique des Semiconducteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, BP 51, 2070 La Marsa, Tunisia
b Laboratoire de Photonique et de Nanostructures CNRS, UPR20, Bagneux, France |
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| Abstract: | We report a reflectance study on series of shallow quantum wells GaAs/AlxGa1−xAs types with different aluminium concentration. The observed barrier exciton reflectance line shape depends strongly on the shift in aluminium concentration in the two barriers, with the appropriate choice of the cap layer thickness. This observation was based on the reflectivity line shape analysis of anti-Bragg structures. |
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| Keywords: | 71.36.+c 78.65.Fa 71.35.+z |
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