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Dependence of the heavy-hole exciton reduced mass on quantum-well size in InGaAs/GaAs heterostructures
Authors:Kyu-Seok Lee  Chae-Deok LeeYongmin Kim  Sam Kyu Noh
Institution:a Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong, Daejeon 305-350, South Korea
b Raytheon RF Components, 362 Lowell St., Andover, MA 01810, USA
c Department of Applied Physics, Dankook University, Yongsan, Seoul 140-714, South Korea
d Quantum Dot Technology Laboratory, Materials Evaluation Center, Korea Research Institute of Standards and Science, Daejeon 305-600, South Korea
Abstract:We present low temperature photoluminescence investigations of the exciton ground state of In0.14Ga0.86As/GaAs quantum wells (QW) in the presence of pulsed magnetic fields up to 50 T. The exciton in-plane reduced mass and the heavy-hole in-plane mass are determined from the best fit of theoretical calculations to the magnetic field dependence of PL peaks. When the QW thickness decreases, their masses increases due to valence-band mixing effect.
Keywords:71  35  Ji  78  55  Cr  78  20  Ls
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