Free-standing tetracene single crystal field effect transistor |
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Authors: | V.Y. Butko X. ChiA.P. Ramirez |
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Affiliation: | Los Alamos National Laboratory, MST-10, MS-K764, P.O. Box 1663, Los Alamos, NM 87545, USA |
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Abstract: | We have fabricated and studied field effect transistors (FETs) on the optically transparent free-standing organic single crystals of tetracene. These FETs exhibit effective hole channel mobility μeff up to 0.15 cm2/Vs and on-off ratios up to 2×107. Using measured values of μeff, thermal activation energy, and a simple model, we deduce an intrinsic free carrier mobility in the range of tens of cm2/Vs, similar to that found in pentacene crystals. These values should be considered only as a rough indication of achievable mobilities in samples much purer than those presently studied. The obtained results show the possibility of FET behavior in transparent crystals with low intrinsic carrier density. |
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Keywords: | 72.80.Le 71.20.Rv 72.20.Jv |
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