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Free-standing tetracene single crystal field effect transistor
Authors:V.Y. Butko  X. ChiA.P. Ramirez
Affiliation:Los Alamos National Laboratory, MST-10, MS-K764, P.O. Box 1663, Los Alamos, NM 87545, USA
Abstract:We have fabricated and studied field effect transistors (FETs) on the optically transparent free-standing organic single crystals of tetracene. These FETs exhibit effective hole channel mobility μeff up to 0.15 cm2/Vs and on-off ratios up to 2×107. Using measured values of μeff, thermal activation energy, and a simple model, we deduce an intrinsic free carrier mobility in the range of tens of cm2/Vs, similar to that found in pentacene crystals. These values should be considered only as a rough indication of achievable mobilities in samples much purer than those presently studied. The obtained results show the possibility of FET behavior in transparent crystals with low intrinsic carrier density.
Keywords:72.80.Le   71.20.Rv   72.20.Jv
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