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Unusual atomic arrangements in amorphous silicon |
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| Authors: | S. Kugler,K. Kohary,K. Ká dasL. Pusztai |
| Affiliation: | a Department of Theoretical Physics, Budapest University of Technology and Economics, H-1521 Budapest, Hungary b Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK c Research Institute for Solid State Physics and Optics, P.O. Box 49, H-1525 Budapest, Hungary |
| Abstract: | The existence of small bond angles (like those of triangles and squares) in amorphous silicon networks were studied by the tight-binding molecular dynamics method, by analyzing the statistical data of Si-Si-Si fragments inside large molecules, and also by the Reverse Monte-Carlo simulation method. The influence of small bond angles on the electronic density of states was revealed. |
| Keywords: | 61.43.Bn 61.43.Dq 61.68.+n 71.55.Jv |
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