Numerical analysis of electronic conductivity in graphene with resonant adsorbates: comparison of monolayer and Bernal bilayer |
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Authors: | Ahmed Missaoui Jouda Jemaa Khabthani Nejm-Eddine Jaidane Didier Mayou Guy Trambly de Laissardière |
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Institution: | 1.Laboratoire de Spectroscopie Atomique Moléculaire et Applications, Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Campus Universitaire,Tunis,Tunisia;2.Laboratoire de Physique de la matière condensée, Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Campus Universitaire,Tunis,Tunisia;3.Université Grenoble Alpes,Grenoble,France;4.CNRS,Grenoble,France;5.Laboratoire de Physique théorique et Modélisation, CNRS and Université de Cergy-Pontoise,Cergy-Pontoise,France |
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Abstract: | We describe the electronic conductivity, as a function of the Fermi energy, in the Bernal bilayer graphene (BLG) in presence of a random distribution of vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG) with the same defect concentrations. These transport properties are related to the values of fundamental length scales such as the elastic mean free path L e , the localization length ξ and the inelastic mean free path L i . Usually the later, which reflect the effect of inelastic scattering by phonons, strongly depends on temperature T. In BLG an additional characteristic distance l 1 exists which is the typical traveling distance between two interlayer hopping events. We find that when the concentration of defects is smaller than 1%–2%, one has l 1 ≤ L e ? ξ and the BLG has transport properties that differ from those of the MLG independently of L i (T). Whereas for larger concentration of defects L e <l 1 ? ξ, and depending on L i (T), the transport in the BLG can be equivalent (or not) to that of two decoupled MLG. We compare two tight-binding model Hamiltonians with and without hopping beyond the nearest neighbors. |
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