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Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors
Authors:B. Tongbram  S. Shetty  H. Ghadi  S. Adhikary  S. Chakrabarti
Affiliation:1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, Maharashtra, India
Abstract:
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