Synthesis of anodic silicon oxide films in water-organic solutions containing orthophosphoric acid |
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| Authors: | I. L. Baranov L. V. Tabulina L. S. Stanovaya T. G. Rusal’skaya |
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| Affiliation: | (1) Educational Institution “Belarussian State University of Informatics and Radioelectronics”, ul. P. Brovki 6, Minsk, 220027, Belarus |
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| Abstract: | Variations in electrophysical properties of anodic silicon oxide at the surface of semiconductor silicon are studied as a function of the composition of electrolytic solutions containing orthophosphoric acid and the conditions of reaching the final formation potential. The optimum conditions for the formation of anodic SiO2 coatings that include phosphorus-containing admixtures are determined, the coatings being intended for application as diffusates in nanoelectronics. |
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| Keywords: | anodic treatment silicon oxide solid diffusate diode region nanoelectronics |
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