| Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2O3 Ultra-Thin Film on Si Substrate |
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| 引用本文： | 徐敏 卢红亮 丁士进 孙亮 张卫 汪礼康. Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2O3 Ultra-Thin Film on Si Substrate[J]. 中国物理快报, 2005, 22(9): 2418-2421 |
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| 作者姓名： | 徐敏 卢红亮 丁士进 孙亮 张卫 汪礼康 |
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| 作者单位： | State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 |
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| 基金项目： | Supported by the Program for New Century Excellent Talents in Universities （NCET） and the Science and Technology Committee of Shanghai under Grant No 04JC14013. |
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| 摘 要： | Ultra-thin Al2O3 dielectric films have been deposited on Si substrates by using trimethyl aluminium （TMA） and water as precursors in an atomic layer deposition （ALD） system. Growth of the interracial layer between ultra-thin Al2O3 and the Si substrate is effectively suppressed by a long-time TMA surface pretreatment of the Si substrate prior to A1203 atomic layer deposition. High resolution transmission electron microscopy （TEM） images show that the thickness of the interracial layer is reduced to be 0.5nm for the sample with TMA pretreatment lasting 3600s. The x-ray photoelectron spectroscopy results indicate that the A1203 film deposited on the TMApretreated Si surface exhibits very good thermal stability. However, a hysteresis of about 50mV is observed in the C- V curve of the samples with the TMA pretreatment.
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| 关 键 词： | 三甲基色氨酸铝 表面处理 原子层 沉积作用 氧化铝薄膜 |
| 收稿时间： | 2005-05-17 |
| 修稿时间： | 2005-05-17 |
Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2O3 Ultra-Thin Film on Si Substrate |
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| Xu Min;Lu GongLiang;Ding ShiJin;Sun Liang;Zhang Wei;Wang LiKang. Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2O3 Ultra-Thin Film on Si Substrate[J]. Chinese Physics Letters, 2005, 22(9): 2418-2421 |
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| Authors: | Xu Min Lu GongLiang Ding ShiJin Sun Liang Zhang Wei Wang LiKang |
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