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Aging of the field-induced asymmetryin a disordered ferroelectric
Authors:B. Bonello  P. Doussineau  V. Dupuis  A. Levelut
Affiliation:(1) Institut des NanoSciences de Paris - Université Pierre et Marie Curie-Paris 6, CNRS UMR 7588, Université Denis Diderot-Paris 7 - 140 rue de Lourmel 75015, Paris, France;(2) Laboratoire des Liquides Ioniques et Interfaces Chargées, Université Pierre et Marie Curie - Paris 6, CNRS UMR 7612 - 4, place Jussieu, 75252 Paris Cedex 05, France
Abstract:The isothermal aging of the asymmetry induced in the disordered dielectric crystal $mbox{KTa}_{1-x} mbox{Nb}_{x} 
mbox{O}_{3} $ (x=0.027) submitted to the biasing electric field E, is investigated. To this end, the response of the complex dielectric constant to infinitesimal field changes $delta{bf E}$ , applied to the sample after a variable aging delay, has been measured for different magnitudes of E and after different aging delays. Two different experimental procedures have been used: in both cases the response strongly depends on the time spent under field. For short aging delays, the response has a strong contribution proportional to δE and a weak quadratic contribution proportional to $left({delta E}right)^2$ . As time elapses, the linear and the quadratic contributions age in opposite ways: the former decreases whereas the latter increases. This paradoxical behaviour is analyzed in the framework of a model which attributes aging and the related effects (rejuvenation, memory) to the evolution of polarization domain walls: the decrease of the linear contribution is related to the decrease of the total wall area, while the increase of the quadratic term is attributed to wall reconformations.
Keywords:61.43.-j Disordered solids  77.22.Gm Dielectric loss and relaxation
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