Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet |
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Institution: | 1.College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China;2.Department of Electrical and Computer Engineering, Shinshu University, Wakasato 4-17-1, Nagano 380-8553, Japan;3.School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China;4.Center for Magnetism and Spintronics, Sichuan Normal University, Chengdu 610068, China |
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Abstract: | Skyrmions in synthetic antiferromagnetic (SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density. Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin-orbit torque, the skyrmion Hall effect, skyrmion-skyrmion repulsion, and skyrmion-edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates. |
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Keywords: | skyrmions logic gates synthetic antiferromagnets micromagnetic simulation |
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