氧分压调控氧化铜薄膜生长及其表面功函数研究

本文采用反应磁控溅射法制备p型二元铜氧化物半导体薄膜，通过氧气流量调节实现Cu₂O、CuO和Cu₄O₃薄膜的可控生长。所制备薄膜的形貌与结构分别利用扫描电子显微镜、X射线衍射仪以及拉曼光谱进行表征。经紫外可见分光光度计测量可知，Cu₂O、CuO和Cu₄O₃薄膜的带隙分别为2.89 eV、1.55 eV和2.74 eV。为进一步研究Cu₂O、CuO和Cu₄O₃薄膜的表面物理性质，基于Kelvin探针力显微镜(KPFM)技术直接测量了薄膜样品与探针尖端间的接触电位差(V_CPD),结果表明Cu₂O、CuO和Cu₄O₃薄膜的表面功函数都随着温度的升高而呈现逐渐减小的趋势。

Growth and Surface Work Function of Copper Oxide Thin Films Controlled by Oxygen Partial Pressure

p-type binary copper oxide semiconductor films were prepared by reactive magnetron sputtering method, and the controlled growth of Cu₂O, CuO and Cu₄O₃ thin films was realized by adjusting the oxygen flow rate. The surface morphology of the films was observed by scanning electron microscopy. Meanwhile, the structure of the films was characterized by X-ray diffractometer and Raman spectroscopy. Measured by UV-Vis spectrophotometer, the band gaps of Cu₂O, CuO and Cu₄O₃ thin films are 2.89 eV, 1.55 eV and 2.74 eV, respectively. In order to further study the surface physical properties of Cu₂O, CuO and Cu₄O₃ thin films, Kelvin probe force microscope (KPFM) was used to directly measure the contact potential difference between film and probe tip (V_CPD). The results indicate that the surface work functions of Cu₂O, CuO and Cu₄O₃ thin films gradually decrease with the increase of temperature.