| Photoluminescence and transmission spectra of nanocrystalline GaAs（1-x）Sbx embedded in silica films |
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| 引用本文： | 刘发民,张立德,李国华.Photoluminescence and transmission spectra of nanocrystalline GaAs（1-x）Sbx embedded in silica films[J].中国物理 B,2005,14(10):2145-2148. |
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| 作者姓名： | 刘发民 张立德 李国华 |
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| 作者单位： | Department of Physics, School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China;Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;National Laboratory for Superlattices and Microstructure,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | Project supported by the Aeronautics Science Foundation of China (Grant No 03G51069). |
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| 摘 要： | The composite films of the nanocrystMline GaAs（1-x）Sbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence （PL） properties of the nanocrystalline GaAs（1-x）Sbx indicated that the PL peaks of the GaAs（1-x）Sbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystMline GaAs（1-x）Sbx-SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.
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| 关 键 词： | 光致发光 传输光谱 纳米晶体结构 GaAs 硅石薄膜 |
| 收稿时间： | 3/1/2005 12:00:00 AM |
| 修稿时间： | 2005-03-012005-05-24 |
Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films |
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| Liu Fa-Min,Zhang Li-De and Li Guo-Hua.Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films[J].Chinese Physics B,2005,14(10):2145-2148. |
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| Authors: | Liu Fa-Min Zhang Li-De and Li Guo-Hua |
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| Institution: | Department of Physics, School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China; Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China; National Laboratory for Superlattices and Microstructure,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The composite films of the nanocrystalline GaAs1-xSbx--SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx--SiO2
composite films, as compared with that of the corresponding bulk semiconductor,which is due to the quantum confinement effect. |
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| Keywords: | nanocrystalline GaAs1-xSbx photoluminescence transmission absorption quantum confinement effect |
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