Photoabsorption oscillations in semiconductors with sharply anisotropic effective mass of electrons in quantizing magnetic fields

A theory of photoabsorption on magnetic-impurity states of carriers with sharply anisotropic effective mass is developed. Both in crossed and parallel electric and magnetic fields the photoabsorption coefficient is investigated for intraband (in terms of Landau bands) and interband transitions of an electron. It is shown that the resonant component of the photoabsorption coefficient at electron detachment and the resonant component of cyclotron resonance harmonics have periodically dependence by the magnetic field as √H. Influence of parity of the magnetic-impurity states on frequency dependence of the resonant component of photoabsorption coefficient is studied.