A comparative study on diode-pumped continuous wave Tm:Ho:YVO4 and Tm:Ho:GdVO4 lasers |
| |
| Authors: | B. Q. Yao F. Chen C. T. Wu Q. Wang G. Li C. H. Zhang Y. Z. Wang Y. L. Ju |
| |
| Affiliation: | 1.National Key Laboratory of Tunable Laser Technology,Harbin Institute of Technology,Harbin,China |
| |
| Abstract: | In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO4 microchip laser and Tm:Ho:GdVO4 microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO4 laser and Tm:Ho:GdVO4 laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO4 laser, Tm:Ho:YVO4 laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO4 laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO4 laser. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
