| 液相外延生长超薄有源层Al_xGa_（1－x）As／GaAs分别限制双异质结构激光器 |
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| 引用本文： | 任大翠,李含轩,薄报学. 液相外延生长超薄有源层Al_xGa_（1－x）As／GaAs分别限制双异质结构激光器[J]. 光学学报, 1995, 15(10): 1288-1291 |
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| 作者姓名： | 任大翠 李含轩 薄报学 |
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| 作者单位： | 长春光学精密机械学院近代光学所 |
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| 摘 要： | 报道超薄有源层ＡｌｘＧａ１－ｘＡＳ／ＧａＡｓ分别限制双异质结构半导体激光器的液相外延的过程。讨论了过冷度、生长温度和降温速率等对生长速率的影响。扫描电镜测得生长温度为６８０℃时，ＧａＡｓ有源层厚度可低至２５～３５ｎｍ。宽接触分别限制双异质结构ＬＤｓ的室温连续阈值电流密度多在７００～８００Ａ／ｃｍ２。
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| 关 键 词： | 液相外延生长，分别限制双异质结构LDs，超薄有源层 |
| 收稿时间： | 1994-07-17 |
LPE Growth of SCH LD with Ultra-Thin Active Layer |
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| Ren Dacui,Li Hanxuan,Bo Baoxue,Zhang Xingde. LPE Growth of SCH LD with Ultra-Thin Active Layer[J]. Acta Optica Sinica, 1995, 15(10): 1288-1291 |
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| Authors: | Ren Dacui Li Hanxuan Bo Baoxue Zhang Xingde |
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| Abstract: | The realization of SCH multilayer structure with ultra-thin GaAs active layer using a modified graphite boat system and low temperature technology is demonstrated.Our method utilizes thin solutions and saturation wafers to achive GaAs epituxial layer in the thickness of 25～35 nm which is uniform over relatively large area. Broad-contact LDs using the above mentioned epitaxial wafers are fabricated. These devices have threshold current density of 700～800 A/cm2 at room temperature. |
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| Keywords: | SCH LDs ultra-thin layer LPE. |
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