DEEP LEVEL DEFECTS IN SI-IMPLANTED LEC UNDOPED Si-GaAs

The residual electrically active defects in(4×10~(12)cm~(-2)(30KeV)+5×10~(12)cm~(-2)(130KeV))si-implanted LEC undoped si-GaAs activated by two-step rapid thermal annealing(RTA)LABELED AS 970℃(9S)+750℃(12S)have been investigated with deep level transient spec-troscopy(DLTS).Two electron traps ET_1(E_c-0.53eV,σ_n=2.3×10~(-16)cm~2)and ET_2(E_c-0.81eV,σ_n=9.7×10(-13)cm~2)are detected.Furthermore,the noticeable variations of trap's con-centration and energy level in the forbidden gap with the depth profile of defects induced by ion im-plantation and RTA process have also been observed.TheAs_i·V_(As)·As_(Ga)]andV_(As)·As_i·V_(Ga)·As_(Ga)]are proposed to be the possible atomic configurations of ET_1 and ET_2,respectively to explaintheir RTA behaviors.

Deep level defects in si-implanted lec undoped Si?GaAs

The residual electrically active defects in (4×10¹² cm⁻² (30KeV)+5×10¹² cm⁻² (130 KeV)) Si-implanted LEC undoped Si−GaAs activated by two-step rapid thermal annealing(RTA) LABELED AS 970°C(9S)+750°C(12S) have been investigated with deep level transient spectroscopy (DLTS). Two electron trapsET ₁(E _c-0.53eV,σ _n = 2.3 × 10⁻¹⁶ cm²) andET ₂(E _c − 0.81eV,σ _n = 9.7 × 10⁻¹³ cm²) are detected. Furthermore the noticeable variations of trap’s concentration and energy level in the forbidden gap with the depth profile of defects induced by ion implantation and RTA process have also been observed. The As_i·V_As·As_Ga] and V_As·As_i·V_Ga·As_Ga] are proposed to be the possible atomic configurations ofET ₁ andET ₂, respectively to explain their RTA behaviors.