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All-optical determination of initial oxidation of Si(100) and its kinetics |
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| Authors: | N. Witkowski K. Gaál-Nagy F. Fuchs O. Pluchery A. Incze F. Bechstedt Y. Borensztein G. Onida R. Del Sole |
| Affiliation: | 1.Institute of Nano-Sciences of Paris, UMR CNRS 7588, Universities Paris VI and Paris VII,Paris,France;2.European Theoretical Spectroscopy Facility (ETSF), CNISM-CNR-INFM, and Dipartimento di Fisica dell’Università di Milano,Milano,Italy;3.European Theoretical Spectroscopy Facility (ETSF), Institut für Festk?rpertheorie und-optik, Friedrich-Schiller-Universit?t,Jena,Germany;4.European Theoretical Spectroscopy Facility (ETSF), NAST and Dipartimento di Fisica dell’Università di Roma “Tor Vergata”,Roma,Italy |
| Abstract: | By comparison of measured and ab initio calculated surface optical spectra we demonstrate that two main oxidation processes initially occur after dissociation of oxygen molecules, forming in both cases Si–O–Si entities: (i) breaking of Si dimers by incorporation of oxygen atoms; (ii) incorporation into the silicon backbonds. The kinetics up to half-monolayer coverage is determined, and explained in terms of Langmuir-like adsorption mechanisms with different probabilities. |
| Keywords: | KeywordHeading" >PACS 78.68.+m Optical properties of surfaces 73.20.At Surface states, band structure, electron density of states 68.43.Mn Adsorption kinetics |
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