Growth and structural characterization of semiconducting Ru2Si3 |
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Authors: | D. Lenssen H. L. Bay St. Mesters C. Dieker D. Guggi R. Carius S. Mantl |
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Affiliation: | Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, 52425 Jülich, Germany |
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Abstract: | Recent band structure calculations indicate that ruthenium silicide (Ru2Si3) is semiconducting with a direct band gap. Electrical measurements lead to a band gap around 0.8 eV which is technologically important for fiber communications. This makes Ru2Si3 a promising candidate for silicon based optical devices, namely LEDs. We present first results on the epitaxial growth of ruthenium silicide films on Si(1 0 0) and Si(1 1 1) fabricated by the template method, a special molecular beam epitaxy technique. Orientational relationships on Si(1 1 1) have been determined. We characterized the films by Rutherford Backscattering and Channeling, X-ray diffraction and transmission electron microscopy. |
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Keywords: | Ruthenium silicide Semiconducting silicide Molecular beam epitaxy Template technique |
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