| Determination of Al Composition in Strained AlGaN Layers |
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| 引用本文： | 周生强 吴名枋 姚淑德. Determination of Al Composition in Strained AlGaN Layers[J]. 中国物理快报, 2005, 22(12): 3189-3191 |
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| 作者姓名： | 周生强 吴名枋 姚淑德 |
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| 作者单位： | School of Physics, Peking University, Beijing 100871 |
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| 基金项目： | Supported by the Key Laboratory of Heavy Ion Physics, Ministry of Education of China, and by the National Natural Science Foundation under Grant No 10375004. |
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| 摘 要： | AlxGa1-xN/GaN heterostructures are grown on c-sapphire with the Al composition x from 0.2 to 0.4 and thicknesses from 20nm to 30nm. The lattice parameters a and c are determined from 2θ/ω scan. The AIGaN layers are found to be under tensile strain by using x-ray diffraction. Vegard＇s law induces a large deviation in Al composition determination by only considering the linear relationship between one lattice parameter （α or c） and Al composition. The accurate determination of Al composition is only possible with consideration of both the lattice parameters α and c, by assuming the tetragonal distortion in the AlGaN layer. Additionally, the results obtained from x-ray diffraction are verified by Rutherford backscattering.
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| 关 键 词： | AlGaN层 异质结构 厚度 晶格参数 晶体学 |
| 收稿时间： | 2005-08-17 |
| 修稿时间： | 2005-08-17 |
Determination of Al Composition in Strained AlGaN Layers |
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| ZHOU Sheng-Qiang, WU Ming-Fang, YAO Shu-De. Determination of Al Composition in Strained AlGaN Layers[J]. Chinese Physics Letters, 2005, 22(12): 3189-3191 |
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| Authors: | ZHOU Sheng-Qiang WU Ming-Fang YAO Shu-De |
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