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Miniature InGaAsP/InP phase modulator for integrated opto-electronics
Authors:X. S. Wu  Xuehai Wu  Yunping Li  Zhangde Lu  Liangen Gong  Ping Zhou
Affiliation:Shanghai Institute of Metallurgy , Academia Sinica 800 Yishan Rd., Shanghai, 200233, China
Abstract:Abstract

Miniature, etching ridge InGaAsP/InP Phase Modulator with highly efficient phase shifting efficiency of 60°/V.mm and 43°/V.mm for TE and TM modes, respectively, and 3 dB bandwidth of 650 MHz at 1.52 μm are reported. It is well suited for integrated opto-electronics. Some functions depending on bandwidth of the devices are discussed.
Keywords:
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