| 高工作电压GaAs HFET |
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| 引用本文： | 陈正廉,林罡.高工作电压GaAs HFET[J].固体电子学研究与进展,2019,39(2):106-110. |
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| 作者姓名： | 陈正廉 林罡 |
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| 作者单位： | 南京电子器件研究所,南京,210016;南京电子器件研究所,南京,210016 |
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| 摘 要： | 通过对结构和性能的分析与优化,设计并研制了不同场板和宽槽条件下的高工作电压GaAs HFET器件。直流和射频测试结果表明:提升场板长度和宽槽宽度可以有效提高器件的工作电压。器件在南京电子器件研究所流片,最终制备出的器件性能为:击穿电压大于84 V,在20 V工作电压下截止频率为9 GHz,3 GHz时功率增益为15.87 dB、功率附加效率为53%。
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| 关 键 词： | GaAs异质结场效应管 场板 宽槽 工作电压 |
High Operating Voltage GaAs HFET |
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| CHEN Zhenglian,LIN Gang.High Operating Voltage GaAs HFET[J].Research & Progress of Solid State Electronics,2019,39(2):106-110. |
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| Authors: | CHEN Zhenglian LIN Gang |
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| Institution: | (Nanjing Electronic Devices Institute,Nanjing,210016,CHN) |
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| Abstract: | High operating voltage GaAs HFETs with different field-plates and wide-recesses were designed and fabricated after performance analysis and structure optimization.The DC test and RF test results indicate that increasing wide-recess and field-plate can improve operating voltage of device?The device is fabricated in Nanjing Electronic Devices Institute.The final performances of device are that breakdown voltage is greater than 84 V,cut-off frequency is 9 GHz at 20 V,power gain is 15.87 dB and power added efficiency is 53%at 3 GHz. |
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| Keywords: | GaAs heterojunction field effect transistor(HFET) field-plate wide-recess operating voltage |
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