Energy bands in stannic oxide (SnO2) |
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| Authors: | FJ Arlinghaus |
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| Institution: | Physics Department, Research Laboratories, General Motors Corporation, Warren, Mich. 48090, U.S.A. |
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| Abstract: | The energy band structure of stannic oxide has been calculated by a self-consistent augmented plane wave (APW) method. The calculation predicts SnO2 to be a semiconductor with an allowed direct band gap of 3·68 eV for light polarized perpendicular to the tetragonal axis, and of 4·07 eV for parallel polarized light; these values agree well with the measured values of 3·57 and 3·93 eV. The theory also predicts indirect and direct-forbidden optical transitions which are consistent with experiment. |
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