Effect of uniaxial stress on InSbtunnel junctions

The deformation potential constants of heavily doped InSb have been determined by applying uniaxial stress to p-n tunnel junctions formed below the surface of rectangular InSb bars. Stress applied parallel to the major axes of these bars and parallel to the junction plane resulted in a linear decrease in tunnel current as a function of stress. The percentage decreases were 24·5 × 10^?3, 9·5 × 10^?3 and 4·5 × 10^?3cm²kg^?1 for stress applied parallel to 010], 11¯0], and 111] directions respectively. The observed changes in tunnel currents are attributed to a decrease in the tunnel probability produced by a shift in the conduction band edge relative to that of the valence band. Our data is consistent with a hydrostatic deformation potential of — 10 eV, and valence band deformation potentials b = ? 1·3 eV and d = ?7·4 eV.