| Mo2C膜表面高度和高差分布规律研究 |
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| 引用本文： | 郑瑞伦,冉扬强,平荣刚,李声泽. Mo2C膜表面高度和高差分布规律研究[J]. 化学物理学报, 2000, 13(1): 77-83 |
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| 作者姓名： | 郑瑞伦 冉扬强 平荣刚 李声泽 |
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| 作者单位： | [1]西南师范大学物理系 [2]西南师范大学高新材料所 |
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| 摘 要： | 介绍了金属有机气相沉积（ＭＯＣＶＤ）制备Ｍｏ２Ｃ功能膜的过程和对膜表面粗糙度的测量结果；在测量基础上进行统计，找出Ｍｏ２Ｃ膜表面高度和高差分布规律；将ＤＴ２模型推广，进行２＋１维计算机模拟，作出Ｍｏ２Ｃ膜表面３维模拟图。结果表明：实验测得的高度和高差统计分布与计算机模拟的结果一致。
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| 关 键 词： | 高度 高差分布 计算机模拟 碳化钼功能膜 膜表面 |
| 收稿时间： | 1999-02-08 |
Discussion on Distribution of Interface Height and Height Difference for Mo2C Thin Film |
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| Zheng Ruilun,Ran Yangqiang,Ping Ronggang and Li Shengze. Discussion on Distribution of Interface Height and Height Difference for Mo2C Thin Film[J]. Chinese Journal of Chemical Physics, 2000, 13(1): 77-83 |
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| Authors: | Zheng Ruilun Ran Yangqiang Ping Ronggang Li Shengze |
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| Abstract: | Procedure for preparing Mo2C thin film by metalorganic chemical deposition(MOCVD)and experimental data on interface roughness are provided,and the rule for distribution of interface height and height difference is given on basis of measured data.Simulation of 2+1 Dimension interface for Mo2C thin film is carried out through generation of DT2 model.The results show that the distribution of height and height difference is agreement with computer simulated one. |
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| Keywords: | Mo2C functional thin film Distribution of height and height difference Computer simulation |
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